vishay siliconix SI4448DY document number: 69653 s09-0138-rev. b, 02-feb-09 www.vishay.com 1 n-channel 12-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested applications ? pol ? dc/dc product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 12 0.0017 at v gs = 4.5 v 50 56 nc 0.002 at v gs = 2.5 v 46 0.0027 at v gs = 1.8 v 40 so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4448DY-t1 -e3 (lead (pb)-free) SI4448DY-t1-ge3 (lead (pb)-free and halogen-free) g d s d s d s d n-channel mosfet g d s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 80 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d 50 a t c = 70 c 40 t a = 25 c 32 b, c t a = 70 c 26 b, c pulsed drain current i dm 70 continuous source-drain diode current t c = 25 c i s 7 t a = 25 c 3 b, c single pulse avalanche current l = 0.1 mh i as 20 avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 7.8 w t c = 70 c 5.0 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 s r thja 29 35 c/w maximum junction-to-foot (drain) steady state r thjf 13 16
www.vishay.com 2 document number: 69653 s09-0138-rev. b, 02-feb-09 vishay siliconix SI4448DY notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 12 v v ds temperature coefficient v ds /t j i d = 250 a 14 mv/c v gs(th) temperature coefficient v gs(th) /t j - 3.3 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v 1 a v ds = 12 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 40 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 20 a 0.0014 0.0017 v gs = 2.5 v, i d = 15 a 0.0016 0.0020 v gs = 1.8 v, i d = 10 a 0.0022 0.0027 forward transconductance a g fs v ds = 6 v, i d = 20 a 190 s dynamic b input capacitance c iss v ds = 6 v, v gs = 0 v, f = 1 mhz 12350 pf output capacitance c oss 2775 reverse transfer capacitance c rss 1590 total gate charge q g v ds = 6 v, v gs = 4.5 v, i d = 10 a 99 150 nc v ds = 6 v, v gs = 2.5 v, i d = 10 a 56 85 gate-source charge q gs 10.3 gate-drain charge q gd 13.4 gate resistance r g f = 1 mhz 0.75 1.5 tu r n - o n d e l ay t i m e t d(on) v dd = 6 v, r l = 0.6 i d ? 10 a, v gen = 4.5 v, r g = 1 38 70 ns rise time t r 22 40 turn-off delay time t d(off) 240 400 fall time t f 33 55 tu r n - o n d e l ay t i m e t d(on) v dd = 6 v, r l = 0.6 i d ? 10 a, v gen = 8 v, r g = 1 20 40 rise time t r 11 22 turn-off delay time t d(off) 100 170 fall time t f 11 22 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 7 a pulse diode forward current a i sm 70 body diode voltage v sd i s = 3 a 0.54 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 84 140 ns body diode reverse recovery charge q rr 93 150 nc reverse recovery fall time t a 28 ns reverse recovery rise time t b 56
document number: 69653 s09-0138-rev. b, 02-feb-09 www.vishay.com 3 vishay siliconix SI4448DY typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 14 2 8 42 56 70 0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =5thr u 1.5 v 1 v 0.0010 0.0013 0.0016 0.0019 0.0022 0.0025 0142 8 42 56 70 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =4.5 v v gs =2.5 v v gs =1. 8v 0.0 0.9 1. 8 2.7 3.6 4.5 0 224466 88 110 i d =10a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =4 v v ds =6 v v ds = 8v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2.0 0 0.3 0.6 0.9 1.2 1.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t j = - 55 c t c = 125 c c rss 0 3200 6400 9600 12 8 00 16 000 0246 8 10 12 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =20a v gs =1. 8v v gs =4.5 v
www.vishay.com 4 document number: 69653 s09-0138-rev. b, 02-feb-09 vishay siliconix SI4448DY typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0 0.2 0.4 0.6 0. 8 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0.5 - 0.3 - 0.1 0.1 0.3 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0 0.002 0.004 0.006 0.00 8 0.010 012345 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 125 c i d =20a 0 40 8 0 120 160 200 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms dc 10 s 0.1 1 10 10 t a = 25 c single p u lse 1s limited b yr ds(on) *
document number: 69653 s09-0138-rev. b, 02-feb-09 www.vishay.com 5 vishay siliconix SI4448DY typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 11 22 33 44 55 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-foot 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power, junction-to-ambient 0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 69653 s09-0138-rev. b, 02-feb-09 vishay siliconix SI4448DY typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69653 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 100 0.2 0.1 0.05 0.02 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 d u ty cycle = 0.5 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c/ w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted single p u lse normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
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